Current-Driven Magnetic Devices for Non-Volatile Logic and Memory

نویسنده

  • David M. Bromberg
چکیده

......................................................................................................................................... iii Table of

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Silicon spintronics: Progress and challenges

Electron spin attractsmuch attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin f...

متن کامل

Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates

Recently, magnetic tunnel junction (MTJ)-based implication logic gates have been proposed to realize a fundamental Boolean logic operation called material implication (IMP). For given MTJ characteristics, the IMP gate circuit parameters must be optimized to obtain the minimum IMP error probability. In this work we present the optimization method and investigate the effect of MTJ device paramete...

متن کامل

Ultra Compact Non-volatile Flip-Flop for Low Power Digital Circuits Based on Hybrid CMOS/Magnetic Technology

Today, complex systems are mainly integrated in CMOS technology, which is facing issues in advanced process nodes, in particular for power consumption and heat dissipation. Magnetic devices such as Magnetic Tunnel Junction (MTJ) have specific features: non-volatility, high cyclability (more than 10) and immunity to radiations. Combined with CMOS devices they offer specific and new features to d...

متن کامل

Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memory

0038-1101/$ see front matter 2013 Elsevier Ltd. A http://dx.doi.org/10.1016/j.sse.2013.02.017 ⇑ Corresponding author. E-mail addresses: [email protected] (H iue.tuwien.ac.at (T. Windbacher), [email protected] [email protected] (S. Selberherr). As the feature size of CMOS components scales down, the standby power losses due to high leakage currents have become a top concern for moder...

متن کامل

Study of single layer and multilayer nano-magnetic logic architectures

Related Articles A coherent two-channel source of Cherenkov superradiance pulses Appl. Phys. Lett. 100, 224102 (2012) Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copperphthalocyanine Appl. Phys. Lett. 100, 213303 (2012) Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copperphthalocyanine APL: Org. Electron. Photonic...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2015